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提出了一种垂直GaN沟槽栅金属氧化物半导体场效应晶体管(TG-MOSFET)半物理模型，将经典Enz-Krummenaker-Vittoz(EKV)模型应用于垂直GaN器件，融入多种高阶物理效应，并开发了自热模型。基于TCAD仿真，分析了界面陷阱、漏致势垒降低(DIBL)、电流拥挤、速度饱和及自热效应对器件特性的影响，并据此引入相应的数学修正项，实现器件静态特性、体二极管行为及非线性电容的高精度描述。通过Verilog-A语言完成SPICE模型的构建。仿真结果表明，所建模型能够准确、高效地描述垂直GaN TG-MOSFET的电热特性，为垂直GaN器件的研发与仿真应用提供参考。
Abstract：A semi-physical model for vertical GaN trench-gate metal-oxide-semiconductor field-effect transistors(TG-MOSFETs) was proposed. The classical Enz-Krummenaker-Vittoz(EKV) model was applied to vertical GaN devices, incorporating multiple higher-order physical effects and developing a self-heating model. Based on TCAD simulations, the impacts of interface trap, drain-induced barrier lowering(DIBL), current crowding, velocity saturation and self-heating effects on device characteristics were analyzed. Corresponding mathematical correction terms were introduced to achieve high-accuracy descriptions of static characteristics, body diode behavior and nonlinear capacitances. The SPICE model was implemented using the Verilog-A language. Verification results demonstrate that the proposed model can accurately and efficiently describe the electrothermal properties of vertical GaN TG-MOSFETs, offering reference for the development and simulation application of vertical GaN devices.
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基本信息:
DOI：10.13290/j.cnki.bdtjs.2026.05.002
中图分类号:TN386
引用信息:
[1]杨文龙,刘伟景,廉浩哲,等.考虑物理效应的垂直GaN TG-MOSFET功率器件模型[J].半导体技术,2026,51(05):428-435.DOI:10.13290/j.cnki.bdtjs.2026.05.002.
2026-03-19
2026-03-19
2026-03-19