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当今信息社会已进入通用人工智能时代，大数据呈指数规律增长，不但要求数据处理速度高速增长，同时也要求数据的传输带宽更宽，推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点，相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势，主要包括低噪声放大器与接收前端，射频-直流整流器与射频能量收集器，功率放大器、RF信号放大器与发射机，振荡器、混频器与频率综合器，移相器、开关、集成无源元件和相控阵，RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面，凝练了各类RF IC的发展趋势和关键技术创新点。
Abstract：In the present information society, which has entered the era of general artificial intelligence, big data is experiencing exponential growth. This not only calls for a rapid increase in data processing speed, but also demands a broader data transmission bandwidth, resulting in the advancement of data carrier frequencies towards the high end of the radio frequency(RF). Si-based RF CMOS and RF BiCMOS integrated circuit(IC), characterized by their small size, low power consumption and ease of integration, are correspondingly undergoing rapid development. An overview of the latest advancements and development trends of Si-based RF CMOS and RF BiCMOS is presented. It encompasses seven principal aspects of RF IC development, namely low-noise amplifiers and receiver front-ends, RF-DC recti-fiers and RF energy harvesters, power amplifiers, RF signal amplifiers and transmitters, oscillators, mixers and frequency synthesizers, phase shifters, switches, integrated passive devices and phased arrays, as well as RF application specific integrated circuit(ASIC) and microsystem integration. The development tendencies and key technological innovation points of various types of RF ICs are condensed.
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基本信息:
DOI：10.13290/j.cnki.bdtjs.2026.01.001
中图分类号:TN386
引用信息:
[1]李永,赵正平.RF CMOS、BiCMOS的新进展（五）——移相器、RF开关、集成无源元件和相控阵[J].半导体技术,2026,51(01):1-12.DOI:10.13290/j.cnki.bdtjs.2026.01.001.
2025-11-19
2025-11-19
2025-11-19