| 340 | 0 | 612 |
| 下载次数 | 被引频次 | 阅读次数 |
当今信息社会已进入通用人工智能时代，大数据呈指数规律增长，不但要求数据处理速度高速增长，同时也要求数据的传输带宽更宽，推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点，相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势，主要包括低噪声放大器与接收前端，射频-直流整流器与射频能量收集器，功率放大器、RF信号放大器与发射机，振荡器、混频器与频率综合器，移相器、开关、集成无源元件和相控阵，RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面，凝练了各类RF IC的发展趋势和关键技术创新点。
Abstract：In the present information society, which has entered the era of general artificial intelligence, big data is experiencing exponential growth. This not only calls for a rapid increase in data processing speed, but also demands a broader data transmission bandwidth, resulting in the advancement of data carrier frequencies towards the high end of the radio frequency(RF). Si-based RF CMOS and RF BiCMOS integrated circuit(IC), characterized by their small size, low power consumption and ease of integration, are correspondingly undergoing rapid development. An overview of the latest advancements and development trends of Si-based RF CMOS and RF BiCMOS is presented. It encompasses seven principal aspects of RF IC development, namely low-noise amplifiers and receiver front-ends, RF-DC recti-fiers and RF energy harvesters, power amplifiers, RF signal amplifiers and transmitters, oscillators, mixers and frequency synthesizers, phase shifters, switches, integrated passive components and phased arrays, as well as RF application specific integrated circuit(ASIC) and microsystem integration. The development tendencies and key technological innovation points of various types of RF ICs are condensed.
[72] CHEN C J,LI X M,HU R,et al.An 83.4%-peak-efficiency envelope-tracking supply modulator using a class-G linear amplifier and a single-inductor dual-input-dual-output converter for 200 MHz bandwidth 5G new radio RF applications [C] // Proceedings of IEEE International Solid-State Circuits Conference (ISSCC).San Francisco,USA,2024:496-497.
[73] NAKATANI T,WAMBACH T,FALCON E N,et al.An 830-MHz CMOS switch-mode power amplifier under time-multiplexing outphasing operation [C] // Procee-dings of IEEE Wireless and Microwave Technology Conference (WAMICON).Clearwater,USA,2024:10522858.
[74] HUANG H,LIU X L,TANG Z J,et al.A 0.48 mm2 sub-2.4 GHz transceiver with reused matching network and duty-cycle controlled class-E PA for medical band [C] // Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:271-274.
[75] FIETTA E B,SEEBACHER D,PONTON D,et al.On the efficiency enhancement of voltage mode digital Doherty power amplifiers [C] // Proceedings of IEEE Nordic Circuits and Systems Conference (NorCAS).Lund,Sweden,2024:10752466.
[76] GANGADHARAN S,KHANAN R,THANGASAMY V.Comparator based envelope tracking for RF PA using FinFET [C] // Proceedings of the 11th International Conference on Reliability,Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO).Noida,India,2024:10522338.
[77] MURAD S A Z,HASAN A F,BAKAR F A.Design of 3.5 GHz cascode CMOS class E power amplifier for 5G application [C] // Proceedings of the 1st IEEE Inter-national Conference on Communication Engineering and Emerging Technologies (ICoCET).Kepala Batas,Malaysia,2024:10730124.
[78] SRINIVASAN P,GONZALEZ O H,RESTREPO O D,et al.Thermal considerations on RF reliability and aging in SOI CMOS based power amplifiers [C] // Proceedings of IEEE International Reliability Physics Symposium (IRPS).Grapevine,USA,2024:5B.3.
[79] XU J C,SHEN Y Y,DENG J T,et al.A reinforcement-learning-assisted power amplifier for RF fingerprint generation in 65 nm CMOS [J].IEEE Tran-sactions on Circuits and Systems I:Regular Papers,2024,71(7):3050-3063.
[80] WITTLINGER M,GR?ZING M,BERROTH M,et al.A frequency-agile digital-to-RF power amplifier in 22 nm FD-SOI CMOS technology [C] // Proceedings of the 19th European Microwave Integrated Circuits Conference (EuMIC).Paris,France,2024:74-77.
[81] ?BERG V,SAAD P,HOU R,et al.RF-DAC-based PA pre-distortion using expanding non-linear RF-DAC scaling [C] // Proceedings of the 19th European Microwave Integrated Circuits Conference (EuMIC).Paris,France,2024:267-270.
[82] ALLURI S,LEUNG V,ASBECK P.A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI [C] // Proceedings of IEEE Topical Confe-rence on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).San Antonio,USA,2024:12-16.
[83] HAAG A,ULUSOY A ?.A Ku-band power amplifier in 22 nm FD-SOI [C] // Proceedings of the 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).San Antonio,USA,2024:10438628.
[84] AL-HUSSEINI Z,TESTA P V,SYED S,et al.A 22FDX? 2 stack power amplifier for 5G applications with 19 dBm Psat and 49% peak PAE [C] // Proceedings of IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).San Antonio,USA,2024:47-50.
[85] DIVAY A,DEHOS C,CHARLET I,et al.A methodo-logy to address RF aging of 40 nm CMOS PA cells under 5G mmW modulation profiles [C] // Proceedings of IEEE International Reliability Physics Symposium (IRPS).Grapevine,USA,2024:4B.2-1.
[86] WOLF R,JAIN V,JAIN S,et al.SiGe and CMOS technologies for wireless PA applications [C] // Proceedings of IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).Fort Lauderdale,USA,2024:298-305.
[87] LAURITANO M,BAUMGARTNER P,SINGH P,et al.Systematic design methodology for CMOS millimeter-wave power amplifiers with an E-band fully differential implementation in 16-nm FinFET [J].IEEE Transactions on Microwave Theory and Techniques,2024,72(8):4650-4659.
[88] CACHO F,CATHELIN P,HAI J,et al.Robustness assessment through 77 GHz operating life test of power amplifier for radar applications in 28 nm FD-SOI CMOS [C] // Proceedings of IEEE International Reliability Physics Symposium (IRPS).Grapevine,USA,2024:4B.3.
[89] TARAR M M,QAYYUM S,ALI A,et al.Loss-compensated cascaded multistage distributed power amplifier in 65 nm CMOS technology [J].IEEE Access,2024,12:98917-98927.
[90] ZHANG L,MA K X,FU H P,et al.A compact 140-GHz power amplifier with 15.4-dBm Psat and 14.25% peaking PAE in 28-nm bulk CMOS process [J].IEEE Transactions on Microwave Theory and Techniques,2024,72(5):3016-3030.
[91] STADLER P,PAPURCU H,ROMSTADT J,et al.A D-band 28 nm CMOS-bulk power amplifier with 12.8 dBm output power and 31.3 GHz 3 dB bandwidth [C] // Proceedings of the 24th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).San Antonio,USA,2024:9-12.
[92] ORDOUEI H,GERFERS F.Energy-efficient D-band power amplifier linearization adopting back-gate feed-forward technique in 22 nm FD-SOI [C] // Proceedings of IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).San Antonio,USA,2024:89-92.
[93] TRINH V S,SONG J M,PARK J D.A 16.5-dBm D-band eight-way power amplifier utilizing cascaded transformers in 40-nm bulk CMOS [J].IEEE Microwave and Wireless Technology Letters,2024,34(8):1019-1022.
[94] DAVIDSON A,KRISHNASWAMY H.Phased-array-compatible area-efficient D-band power amplifiers in 45 RF SOI based on cascade stacking [C] // Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:191-194.
[95] MULLA H,KUMAR R,NAGAVENI S.Design and comparison of noise,power of resistive,RC and capacitive feedback TIAs for RF receiver application [C] // Proceedings of IEEE International Conference for Women in Innovation,Technology & Entrepreneurship (ICWITE).Bangalore,India,2024:446-449.
[96] PARVIZI M,OMORI T,JALALI B,et al.■ TIA with +15 dB input OMA range for 112 Gb/s PAM4 optical links in 22 nm FD-SOI [C] // Proceedings of IEEE Custom Integrated Circuits Conference (CICC).Denver,USA,2024:10529083.
[97] LI J H,ZHU L B,SU R S,et al.A capacitively coupled chopper instrumentation amplifier with deadtime offset reduction technique for neural signal sensing [J].IEEE Sensors Letters,2024,8(1):4500204.
[98] JEON H R,PARK D W,LEE S G.A D-band differential amplifier with cross-couple of series-connected capacitor and transmission line-based dual-frequency Gmax-core [J].IEEE Transactions on Circuits and Systems II:Express Briefs,2024,71(6):2996-3000.
[99] ZHU L B,ZHOU Z J,WANG W J,et al.A high CMRR differential difference amplifier employing combined input pairs for neural signal recordings [J].IEEE Transactions on Biomedical Circuits and Systems,2024,18(1):100-110.
[100] ANG J D,YANG L,GóMEZ-GARCíA R,et al.A millimeter-wave input-reflectionless amplifier in 45-nm SOI CMOS technology [C] // Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS).Singapore,2024:10557953.
[101] PRASAD K S,HEMANTH P,MANDAL D.A rail-to-rail input class-AB linear amplifier with improved bandwidth and slew-rate for envelope tracking supply modulators [C] // Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS).Singapore,2024:10558486.
[102] RAMLI N S,RAZAK A H A,HALIM A K,et al.Design of CMOS programmable gain amplifier for reconfi-gurable system [C] // Proceedings of IEEE Inter-national Conference on Applied Electronics and Engineering (ICAEE).Shah Alam,Malaysia,2024:10667620.
[103] QI G Z,GUO H N,MAK P I,et al.A SAW-less 3fLO-suppression RF transmitter with a transformer-based N-path switched-capacitor modulator achieving-157.6 dBc/Hz output noise and -61 dBc CIM3 [C] ∥ Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:259-262.
[104] BAI H Y,WANG D,GAO K E,et al.A sub-6 GHz wideband transmitter with LO harmonic rejection RF front-ends using frequency-adaptive calibration [C] // Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:103-106.
[105] ELGAARD C,EDHOLM B,P?HLSSON T,et al.A wideband low impedance 6 W transmitter for 5G base stations in 22 nm FD-SOI CMOS [C] // Proceedings of IEEE European Solid-State Electronics Research Conference (ESSERC).Bruges,Belgium,2024:432-435.
[106] DING C,GAO M X,SKRIVERVIK A K,et al.A 49.8 mm2 fully integrated,1.5 m transmission-range,high-data-rate IR-UWB transmitter for brain implants [C] // Proceedings of IEEE Custom Integrated Circuits Conference (CICC).Denver,USA,2024:10528987.
[107] DING K J,MILOSEVIC D,VIDOJKOVIC V,et al.A 60-GHz positive-feedback-based transmitter front-end with 22.8% PAEmax in 28-nm bulk CMOS for inter-satellite communications [C] // Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:3-6.
[108] WANG Z S,WANG H,HASSAN Y O,et al.A CMOS fully integrated 120-Gbps RF-64QAM F-band transmitter with an on-chip antenna for 6G wireless communication [C] // Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC).Washington,USA,2024:343-346.
基本信息:
DOI：10.13290/j.cnki.bdtjs.2025.10.001
中图分类号:TN432
引用信息:
[1]李永,赵正平.RF CMOS、BiCMOS的新进展(三)——功率放大器、RF信号放大器与发射机[J].半导体技术,2025,50(10):981-994.DOI:10.13290/j.cnki.bdtjs.2025.10.001.
2025-07-18
2025-07-18
2025-07-18