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目前半导体制造技术已经跨入0.13μm 和300mm时代,化学机械抛光(CMP)技术在ULSI制造中得到了快速发展,已经成为特征尺寸0.35μm以下IC制造不可缺少的技术。CMP是唯一能够实现硅片局部和全局平坦化的方法,但CMP的材料去除机理至今还没有完全理解、CMP系统过程变量和技术等方面的许多问题还没有完全弄清楚。本文着重介绍了化学机械抛光材料去除机理以及影响硅片表面材料去除率和抛光质量的因素。
Abstract：Presently the semiconductor manufacturing technology has been entered the age of 0.13mmand 300mm. Chemical mechanical polishing has been widely used in the manufacture of ULSI and becomethe indispensable technology of feature size below 0.35mm in IC manufacturing. Chemical mechanicalpolishing is a solitary technology planarizing the wafer with local and global planarization, but the materialremoval mechanism of wafer CMP and the problems on process variables and technologies of CMP systemare not fully understood. In the paper, the material removal mechanism and factors of influencing materialremoval rate and wafer surface quality, in wafer CMP, are mainly introduced.
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基本信息:
DOI：
中图分类号:TN405
引用信息:
[1]苏建修,康仁科,郭东明.超大规模集成电路制造中硅片化学机械抛光技术分析[J].半导体技术,2003(10):27-32.
基金信息:
国家自然科学基金重大项目资助(50390061)